The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Aug. 28, 2008
Masahiro Fukuda, Kawasaki, JP;
Yosuke Shimamune, Kawasaki, JP;
Masaaki Koizuka, Kawasaki, JP;
Katsuaki Ookoshi, Kawasaki, JP;
Masahiro Fukuda, Kawasaki, JP;
Yosuke Shimamune, Kawasaki, JP;
Masaaki Koizuka, Kawasaki, JP;
Katsuaki Ookoshi, Kawasaki, JP;
Fujitsu Microelectronics Limited, Yokohama, JP;
Abstract
A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established.