The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Dec. 02, 2008
Hiroshi Yuzurihara, Atsugi, JP;
Ryuichi Mishima, Machida, JP;
Takanori Watanabe, Yamato, JP;
Takeshi Ichikawa, Hachioji, JP;
Seiichi Tamura, Yokohama, JP;
Hiroshi Yuzurihara, Atsugi, JP;
Ryuichi Mishima, Machida, JP;
Takanori Watanabe, Yamato, JP;
Takeshi Ichikawa, Hachioji, JP;
Seiichi Tamura, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration Ccorresponding to a peak of the impurity concentration in the first impurity region, a concentration Ccorresponding to a peak of the impurity concentration in the second impurity region and a concentration Ccorresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship:C2<C3<C1.