The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Aug. 30, 2007
Shinichi Hirose, Kawasaki, JP;
Tatsuya Usuki, Kawasaki, JP;
Shinichi Hirose, Kawasaki, JP;
Tatsuya Usuki, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
Provided is an optical semiconductor device, which includes a GaAs substrate (or a semiconductor substrate); an n-type contact layer (or a doping layer)formed on one surfaceof the GaAs substrate; an active layerformed on top of the n-type contact layerand including at least one quantum dot; a p-type contact layer (or a contact layer)formed on top of the active layerand being of an opposite conduction type to the n-type contact layer; an insulating layerformed on top of the p-type contact layerand including a first openingwhose size is such that a contact region CR of the p-type contact layerlies within the first opening; a p-side electrode layerformed on top of the contact region CR of the p-type contact layerand on top of the insulating layerand including a second openinglying within the first opening; and a n-side electrode layer (or a second electrode layer)formed on the other surfaceof the GaAs substrate