The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2010

Filed:

Aug. 26, 2005
Applicants:

Shankar Sinha, Redwood Shores, CA (US);

Ashot Melik-martirosian, Sunnyvale, CA (US);

Ihsan Djomehri, Mountain View, CA (US);

Inventors:

Shankar Sinha, Redwood Shores, CA (US);

Ashot Melik-Martirosian, Sunnyvale, CA (US);

Ihsan Djomehri, Mountain View, CA (US);

Assignee:

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming implants for a memory cell includes forming an oxide-nitride-oxide (ONO) stack over a substrate and implanting first impurities in the substrate adjacent each side of the ONO stack using a first implantation energy and a first tilt angle to produce first pocket implants. The method further includes implanting second impurities in the substrate adjacent each side of the ONO stack using a second implantation energy and a second tilt angle to produce second pocket implants, where the second implantation energy is substantially larger than the first implantation energy and where the second tilt angle is substantially larger than the first tilt angle.


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