The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Feb. 22, 2006
Applicant:
Liu-chung Lee, Neipu Township, Pingtung County, TW;
Inventor:
Liu-Chung Lee, Neipu Township, Pingtung County, TW;
Assignee:
Au Optronics Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a thin film transistor matrix substrate is provided. The first photo-mask process is used to define a gate electrode and a signal electrode. The second photo-mask process is used to obtain different thickness of a PR layer in different regions for forming a channel, gate electrode through holes, signal electrode through holes and conductive pads. The third photo-mask process is used to define a source, a drain, an upper signal electrode, a pixel electrode, gate electrode pads and signal electrode pads.