The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Nov. 03, 2006
Toshihiko Baba, Suginamiku, Tokyo, 157-0051, JP;
Atsushi Matsuzono, Kanagawa, JP;
Akio Furukawa, Tokyo, JP;
Satoshi Sasaki, Kanagawa, JP;
Mitsunari Hoshi, Kanagawa, JP;
Toshihiko Baba, Suginamiku, Tokyo, 157-0051, JP;
Atsushi Matsuzono, Kanagawa, JP;
Akio Furukawa, Tokyo, JP;
Satoshi Sasaki, Kanagawa, JP;
Mitsunari Hoshi, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Other;
Abstract
A method for manufacturing a surface-emitting semiconductor laser having a structure in which the single horizontal mode of high power is stably maintained is provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.