The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2010

Filed:

Jun. 30, 2006
Applicants:

Jung-seock Lee, Ichon-shi, KR;

Ky-hyun Han, Ichon-shi, KR;

Inventors:

Jung-Seock Lee, Ichon-shi, KR;

Ky-Hyun Han, Ichon-shi, KR;

Assignee:

Hynix Semiconductor, Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/812 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a semiconductor device includes forming a mask pattern over a substrate; etching a certain portion of the substrate using the mask pattern as an etch mask to form a first recess having sidewalls; forming a polymer-based layer over the sidewalls of the first recess and a top surface of the mask pattern; etching the substrate beneath the first recess using the mask pattern and the polymer-based layer as an etch mask to form a second recess wider and more rounded than the first recess, the second recess and the first recess constituting a bulb-shaped recess; and forming a gate pattern over the bulb-shaped recess.


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