The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2010

Filed:

Nov. 08, 2006
Applicants:

Tsutomu Ogihara, Joetsu, JP;

Takeshi Asano, Joetsu, JP;

Motoaki Iwabuchi, Joetsu, JP;

Takafumi Ueda, Joetsu, JP;

Inventors:

Tsutomu Ogihara, Joetsu, JP;

Takeshi Asano, Joetsu, JP;

Motoaki Iwabuchi, Joetsu, JP;

Takafumi Ueda, Joetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/075 (2006.01); G03F 7/11 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/36 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multilayer resist process comprises forming in sequence an undercoat film, an intermediate film, and a photoresist film on a patternable substrate, and effecting etching in multiple stages. A silicon-containing film forming composition is useful in forming the intermediate film serving as an etching mask, comprising a silicon-containing polymer obtained through hydrolytic condensation of at least one Si—Si bond-containing silane compound having formula: RSiXwherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic materials.


Find Patent Forward Citations

Loading…