The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
May. 05, 2006
Andrei N. Slavin, Rochester Hills, MI (US);
Ilya N. Krivorotov, Irvine, CA (US);
Andrei N. Slavin, Rochester Hills, MI (US);
Ilya N. Krivorotov, Irvine, CA (US);
Other;
Abstract
Spin-torque devices are based on a combination of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects. The basic structure has various applications, including amplifiers, oscillators, and diodes. For example, if the low-magnetoresistance (GMR) contact is biased below a critical value, the device may function as a microwave-frequency selective amplifier. If the GMR contact is biased above the critical value, the device may function as a microwave oscillator. A plurality of low- and high-magnetoresistance contact pairs may be induced to oscillate in a phase-locked regime, thereby multiplying output power. The frequency of operation of these devices will be tunable by the external magnetic field, as well as by the direct bias current, in the frequency range between 10 and 100 GHz. The devices do not use semiconductor materials and are expected to be exceptionally radiation-hard, thereby finding application in military nanoelectronics.