The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Dec. 22, 2006
Applicants:
Stewart S. Taylor, Beaverton, OR (US);
Jing-hong C. Zhan, HsinChu, 300, TW;
Inventors:
Stewart S. Taylor, Beaverton, OR (US);
Jing-Hong C. Zhan, HsinChu, 300, TW;
Assignee:
Other;
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/28 (2006.01); G05F 1/10 (2006.01);
U.S. Cl.
CPC ...
Abstract
A gate-to-source voltage (Vgs) replication circuit includes a diode-connected NMOS transistor coupled to a current source to draw a drain-to-source current therethrough. The generated Vgs is imposed across a source-to-gate junction of a PMOS transistor. A second PMOS transistor is coupled in series with the first PMOS transistor such that the source-to-gate voltage (Vsg) of the second PMOS transistor replicates the Vgs of the NMOS circuit. The second PMOS transistor is coupled as a source follower to bias other NMOS transistors.