The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Jun. 06, 2008
Howard H. Chen, Yorktown Heights, NY (US);
John A. Fifield, Underhill, VT (US);
Louis L. Hsu, Fishkill, NY (US);
Henry H. K. Tang, Poughkeepsie, NY (US);
Howard H. Chen, Yorktown Heights, NY (US);
John A. Fifield, Underhill, VT (US);
Louis L. Hsu, Fishkill, NY (US);
Henry H. K. Tang, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Aspects of the invention relate to a programmable heavy-ion sensing device for accelerated DRAM soft error detection. Design of a DRAM-based alpha particle sensing apparatus is preferred to be used as an accelerated on-chip SER test vehicle. The sensing apparatus is provided with programmable sensing margin, refresh rate, and supply voltage to achieve various degree of SER sensitivity. In addition, a dual-mode DRAM array is proposed so that at least a portion of the array can be used to monitor high-energy particle activities during soft-error detection (SED) mode.