The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Apr. 23, 2007
Applicant:
Seiji Otake, Saitama, JP;
Inventor:
Seiji Otake, Saitama, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/082 (2006.01); H01L 27/102 (2006.01); H01L 29/70 (2006.01); H01L 31/11 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor device of the present invention, an N type epitaxial layer is divided into a plurality of element formation regions by an isolation region. In one of the element formation regions, an NPN transistor is formed. Around the NPN transistor, a protection element having a PN junction region is formed. The PN junction region has a junction breakdown voltage lower than that of a PN junction region of the NPN transistor. By use of this structure, when negative ESD surge is applied to a pad for a base electrode, the PN junction region of the protection element breaks down. Accordingly, the NPN transistor can be protected.