The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2010

Filed:

Sep. 13, 2006
Applicants:

Shuichiro Kojima, Fukuoka, JP;

Mamoru Seike, Osaka, JP;

Takashi Ichihara, Osaka, JP;

Inventors:

Shuichiro Kojima, Fukuoka, JP;

Mamoru Seike, Osaka, JP;

Takashi Ichihara, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
Abstract

An N-type diffusion layer fixed at a potential equal to or above 0V is provided in a segregating region between terminals, and a P-type diffusion layer having a potential equal to that of the N-type diffusion layer on an N-type well constitute a drain of a transistor.


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