The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Dec. 29, 2005
Applicant:
Yong Soo Cho, Daejun-shi, KR;
Inventor:
Yong Soo Cho, Daejun-shi, KR;
Assignee:
Dongbu Electronics Co., Ltd., Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
There are provided a MOSFET and a method for fabricating the same. The MOSFET includes a semiconductor substrate, a first epitaxial layer in a predetermined location of the semiconductor substrate, a second epitaxial layer doped with high concentration impurity ions on the first epitaxial layer, a gate structure on the second epitaxial layer, and source/drain regions with lightly doped drain (LDD) regions. The first epitaxial layer supplies carriers to the second epitaxial layer so that short channel effects are reduced.