The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Aug. 22, 2007
Shunsuke Sakamoto, Fukuoka, JP;
Eisuke Suekawa, Tokyo, JP;
Tetsujiro Tsunoda, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A charge storage layer of first conductive type is formed on the first principal surface of a semiconductor substrate. A base layer of second conductive type is formed on the charge storage layer. Each trench formed through the base layer and the charge storage layer is lined with an insulating film and filled with a trench gate electrode. Dummy trenches are formed on both sides of each trench. Source layers of first conductive type are selectively formed in the surface of the base layer and in contact with the sidewalls of the trenches. The source layers are spaced apart from each other and arranged in the longitudinal direction of the trenches. A contact layer of second conductive type is formed in the surface of the base layer and between each two adjacent source layers arranged in the longitudinal direction of the trenches. A collector layer of second conductive type is formed on the second principal surface of the semiconductor substrate.