The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Jun. 19, 2006
Takao Arai, Kanagawa, JP;
Takao Arai, Kanagawa, JP;
NEC Electronics Corporation, Kawasaki, Kanagawa, JP;
Abstract
Aiming at providing a semiconductor device capable of reducing the ON-resistance when voltage smaller than a predetermined value is applied to the base region and the drift region, and capable of increasing the ON-resistance so as to prevent thermal fracture when the voltage is not smaller than the predetermined value, and at providing a method of fabricating such semiconductor device, a P-type diffusion layeris formed in an N-type drift regionof a semiconductor device, as being apart from a base region, wherein the diffusion layeris formed in a region partitioned by lines L each extending from each of the intersections of the boundary B, between the drift regionand a base areaA of the base region, and the side faces of a trenchsurrounding the base areaA of the base region, towards the bottom plane of the drift regionright under the base areaA, while keeping an angle θof 50° between the lines L and the boundary B.