The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2010

Filed:

Apr. 03, 2007
Applicants:

Mariam Gergi Sadaka, Austin, TX (US);

Berinder P. S. Brar, Newbury Park, CA (US);

Wonill Ha, Thousand Oaks, CA (US);

Chanh Ngoc Minh Nguyen, Calabasas, CA (US);

Inventors:

Mariam Gergi Sadaka, Austin, TX (US);

Berinder P. S. Brar, Newbury Park, CA (US);

Wonill Ha, Thousand Oaks, CA (US);

Chanh Ngoc Minh Nguyen, Calabasas, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0328 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device and method of forming the same. The semiconductor device includes an epitaxially grown and conductive buffer layer having a contact covering a substantial portion of a bottom surface thereof and a lateral channel above the buffer layer. The semiconductor device also includes another contact above the lateral channel and an interconnect that connects the lateral channel to the buffer layer, operable to provide a low resistance coupling between the contact and the lateral channel.


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