The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Oct. 27, 2008
Jonathan J. Wierer, Jr., Pleasanton, CA (US);
Michael R. Krames, Los Altos, CA (US);
John E. Epler, San Jose, CA (US);
Jonathan J. Wierer, Jr., Pleasanton, CA (US);
Michael R. Krames, Los Altos, CA (US);
John E. Epler, San Jose, CA (US);
Philips Lumileds Lighting Co, LLC, San Jose, CA (US);
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an n-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.