The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Mar. 19, 2004
Jens Drechsel, Dresden, DE;
Martin Pfeiffer, Dresden, DE;
Bert Maennig, Dresden, DE;
Karl Leo, Dresden, DE;
Jens Drechsel, Dresden, DE;
Martin Pfeiffer, Dresden, DE;
Bert Maennig, Dresden, DE;
Karl Leo, Dresden, DE;
Technische Universitaet Dresden, Dresden, DE;
Abstract
The invention relates to a photoactive component, especially a solar cell, comprising organic layers and formed by at least one stacked pi, ni, and/or pin diode. The diodes are characterized in that they comprise at least one p-doped or n-doped transport layer having a larger optical band gap than that of the photoactive layer. The individual diodes are characterized by a high internal quantum yield, but can be optically thin (peak absorption <80%). A high external quantum yield is obtained by either enlarging the optical path of the incident light in the diodes using light traps, or by stacking a plurality of the diodes. The transition between two diodes being facilitated by transition layers for the purposes of improved recombination and generation. Both forms of embodiment have a number of specific advantages using the doped transport layers with a large band gap.