The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Dec. 21, 2007
Dong Ho Lee, Seongnam-si, KR;
Kwon Hong, Seongnam-si, KR;
Jae Mun Kim, Seoul, KR;
Hee Soo Kim, Seongnam-si, KR;
Jae Hyoung Koo, Seoul, KR;
Dong Ho Lee, Seongnam-si, KR;
Kwon Hong, Seongnam-si, KR;
Jae Mun Kim, Seoul, KR;
Hee Soo Kim, Seongnam-si, KR;
Jae Hyoung Koo, Seoul, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
In one embodiment, a gate insulating layer, a conductive layer, and a metal layer are formed over a semiconductor substrate. An ion implantation region is formed in an interface of the conductive layer and the metal layer by performing an ion implantation process. A flash annealing process is performed on the ion-implanted semiconductor substrate. The metal layer, the conductive layer, and the gate insulating layer are patterned.