The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7674675 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 09, 2010

Filed:

Jul. 12, 2006
Applicants:

Zachary E. Berndlmaier, Newburgh, NY (US);

Edward W. Kiewra, Verbank, NY (US);

Carl J. Radens, LaGrangeville, NY (US);

William R. Tonti, Essex Junction, VT (US);

Inventors:

Zachary E. Berndlmaier, Newburgh, NY (US);

Edward W. Kiewra, Verbank, NY (US);

Carl J. Radens, LaGrangeville, NY (US);

William R. Tonti, Essex Junction, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention provides a fingered decoupling capacitor in the bulk silicon region that are formed by etching a series of minimum or sub-minimum trenches in the bulk silicon region, oxidizing these trenches, removing the oxide from at least one or more disjoint trenches, filling all the trenches with either in-situ doped polysilicon, intrinsic polysilicon that is later doped through ion implantation, or filling with a metal stud, such as tungsten and forming standard interconnects to the capacitor plates.


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