The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Feb. 26, 2007
Young-joon Ahn, Daejeon, KR;
Suk-pil Kim, Yongin-si, KR;
Jong-jin Lee, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a memory device and a method of manufacturing the memory device, a pair of channel layers included in the memory device may be formed on a sidewall of the sacrificial single crystalline layer pattern located on a protrusion of a semiconductor substrate. Accordingly, an etch damage may be reduced at the channel layer. The sacrificial single crystalline layer pattern may be removed to generate a void between the pair of the channel layers. As a result, a generation of a coupling effect may be reduced between the channel layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile