The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Feb. 04, 2008
Applicants:
Chen-yueh LI, Hsinchu, TW;
Yi-wei Chen, Hsinchu, TW;
Ming-yan Chen, Hsinchu, TW;
Inventors:
Assignee:
Au Optronics Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device and a manufacturing method thereof are provided. The manufacturing method can form a structure of a thin film transistor (TFT) having a symmetric lightly doped region, and thus provide superior operation reliability and electrical performance. In addition, the manufacturing method forms gate patterns of different TFTs by the same mask process and thereby avoids the misalignment of masks so as to improve the processing yield and reduce the manufacturing cost.