The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Nov. 05, 2003
Kenji Maruyama, Kawasaki, JP;
Masaki Kurasawa, Kawasaki, JP;
Masao Kondo, Kawasaki, JP;
Yoshihiro Arimoto, Kawasaki, JP;
Kenji Maruyama, Kawasaki, JP;
Masaki Kurasawa, Kawasaki, JP;
Masao Kondo, Kawasaki, JP;
Yoshihiro Arimoto, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device incorporating a capacitor structure that includes a ferroelectric thin film is obtained by forming, on a single crystalline substratehaving a surface suited for growing thereon a thin film layer of ferroelectric single crystal having a plane (111), a ferroelectric single crystalline thin film' containing Pb and having a plane (111)in parallel with the surface of the substrate (or a ferroelectric polycrystalline thin film containing Pb and oriented parallel with the plane (111) in parallel with the surface of the substrate) and partof a circuit of a semiconductor device, to thereby fabricate the single crystalline substratehaving said ferroelectric thin film containing Pb and said part of the circuit of the semiconductor device; and bonding said single crystalline substrateto another substrate on which the other circuit of the semiconductor device has been formed in advance, to couple the two circuits together. The capacitor in the semiconductor device thus obtained includes a ferroelectric thin film having a large amount of polarizing charge. The semiconductor device can be used as a highly reliable nonvolatile memory.