The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Oct. 26, 2005
Alex Zettl, Kensington, CA (US);
Thomas David Yuzvinsky, Berkeley, CA (US);
Adam Fennimore, Berkeley, CA (US);
Alex Zettl, Kensington, CA (US);
Thomas David Yuzvinsky, Berkeley, CA (US);
Adam Fennimore, Berkeley, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Methods of shape modifying a nanodevice by contacting it with a low-energy focused electron beam are disclosed here. In one embodiment, a nanodevice may be permanently reformed to a different geometry through an application of a deforming force and a low-energy focused electron beam. With the addition of an assist gas, material may be removed from the nanodevice through application of the low-energy focused electron beam. The independent methods of shape modification and material removal may be used either individually or simultaneously. Precision cuts with accuracies as high as 10 nm may be achieved through the use of precision low-energy Scanning Electron Microscope scan beams. These methods may be used in an automated system to produce nanodevices of very precise dimensions. These methods may be used to produce nanodevices of carbon-based, silicon-based, or other compositions by varying the assist gas.