The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2010

Filed:

May. 23, 2007
Applicants:

John G. Edelen, Versailles, KY (US);

George K. Parish, Winchester, KY (US);

Kristi M. Rowe, Richmond, KY (US);

Inventors:

John G. Edelen, Versailles, KY (US);

George K. Parish, Winchester, KY (US);

Kristi M. Rowe, Richmond, KY (US);

Assignee:

Lexmark Internatinoal, Inc., Lexington, KY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B41J 2/05 (2006.01);
U.S. Cl.
CPC ...
Abstract

A micro-fluid ejecting device includes a semiconductor substrate, a plurality of fluid ejection elements formed on the semiconductor substrate, and a plurality of nonvolatile programmable memory devices for storing information related to the operation of the micro-fluid ejecting device. The programmable memory devices, which are at least partially embedded in the semiconductor substrate, each include a source region and a drain region formed in the semiconductor substrate. The source and drain regions have a conductivity type which is opposite the conductivity type of the semiconductor substrate. An insulative layer is formed on the semiconductor substrate over the source region and drain region. A floating gate region is formed on the insulative layer and is spatially disposed between the source region and drain region. The floating gate region is electrically insulated from the source and drain regions by the insulative layer. Electrical contacts are connected to the source region and the drain region. The programmable memory devices collectively provide a high density of memory bits embedded on the substrate for storing information about the micro-fluid ejecting device.


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