The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2010

Filed:

Jul. 20, 2007
Applicants:

Eiji Yamanaka, Tokyo, JP;

Masamitsu Itoh, Yokohama, JP;

Mitsuyo Asano, Yokohama, JP;

Shinji Yamaguchi, Tokyo, JP;

Inventors:

Eiji Yamanaka, Tokyo, JP;

Masamitsu Itoh, Yokohama, JP;

Mitsuyo Asano, Yokohama, JP;

Shinji Yamaguchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

A pattern evaluation method for evaluating a mask pattern includes generating desired wafer pattern data corresponding to the evaluation position of a mask pattern, generating mask pattern contour data based on an image of the mask pattern, and performing a lithography/simulation process based on the mask pattern contour data and generating predicted wafer pattern data when the mask pattern is transferred to a wafer. Further, it includes deriving positional offset between the mask pattern contour data and mask pattern data, correcting a positional error between the desired wafer pattern data and the predicted wafer pattern data based on the positional offset, and comparing the desired wafer pattern data with the predicted wafer pattern data with the positional error corrected.


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