The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2010

Filed:

May. 10, 2005
Applicant:

Yuichi Kuromizu, Kanagawa, JP;

Inventor:

Yuichi Kuromizu, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor light emitting device includes: a substrate; a laminate structure including a first semiconductor layer, an active layer, and a second semiconductor layer; and a current confinement part for limiting a current injection region of the active layer in the second semiconductor layer, or between the active layer and the second semiconductor layer, on the substrate, wherein the current confinement part includes a current confinement layer having a conductive region corresponding to the current injection region of the active layer and a nonconductive region corresponding to a region other than the current injection region of the active layer, and an intermediate layer provided between the current confinement layer and the second semiconductor layer or the active layer in order to prevent a mixed crystal from being formed between the current confinement layer and the second semiconductor layer or the active layer.


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