The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2010

Filed:

Jan. 11, 2008
Applicants:

Sei Seung Yoon, San Diego, CA (US);

Cheng Zhong, San Diego, CA (US);

Dongkyu Park, San Diego, CA (US);

Mohamed Hassan Abu-rahma, San Diego, CA (US);

Inventors:

Sei Seung Yoon, San Diego, CA (US);

Cheng Zhong, San Diego, CA (US);

Dongkyu Park, San Diego, CA (US);

Mohamed Hassan Abu-Rahma, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

Systems and methods of selectively applying negative voltage to word lines during memory device read operation are disclosed. In an embodiment, a memory device includes a word line logic circuit coupled to a plurality of word lines and adapted to selectively apply a positive voltage to a selected word line coupled to a selected memory cell that includes a magnetic tunnel junction (MTJ) device and to apply a negative voltage to unselected word lines.


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