The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Oct. 30, 2007
Jae Kyoung Mun, Daejeon, KR;
Hae Cheon Kim, Daejeon, KR;
Dong Young Kim, Daejeon, KR;
Jong Won Lim, Daejeon, KR;
Ho Kyun Ahn, Daejeon, KR;
Hyun Kyu Yu, Daejeon, KR;
Jae Kyoung Mun, Daejeon, KR;
Hae Cheon Kim, Daejeon, KR;
Dong Young Kim, Daejeon, KR;
Jong Won Lim, Daejeon, KR;
Ho Kyun Ahn, Daejeon, KR;
Hyun Kyu Yu, Daejeon, KR;
Abstract
Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional λ/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost.