The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Jul. 07, 2005
Andreas Hubertus Montree, Leuven, BE;
Jan Willem Slotboom, Eersel, NL;
Prabhat Agarwal, Leuven, BE;
Philippe Meunier-beillard, Leuven, BE;
Andreas Hubertus Montree, Leuven, BE;
Jan Willem Slotboom, Eersel, NL;
Prabhat Agarwal, Leuven, BE;
Philippe Meunier-Beillard, Leuven, BE;
NXP B.V., Eindhoven, NL;
Abstract
The invention relates to a semiconductor device () with a semiconductor body () comprising a bipolar transistor with an emitter region (), a base region () and a collector region () of, respectively, a first conductivity type, a second conductivity type, opposite to the first conductivity type, and the first conductivity type, wherein, viewed in projection, the emitter region () is positioned above or below the base region (), and the collector region () laterally borders the base region (). According to the invention, the base region () comprises a highly doped subregion (A) the doping concentration of which has a delta-shaped profile in the thickness direction, and said highly doped sub-region (A) extends laterally as far as the collector region (). Such a lateral bipolar transistor has excellent high-frequency properties and a relatively high breakdown voltage between the base and collector regions (), implying that the device is suitable for high power applications. The doping concentration lies preferably between about 10and about 10at/cm, and the thickness of the sub-region (A) lies between 1 and 15 nm and preferably between 1 and 10 nm. The invention also comprises a method of manufacturing such a device ().