Versatile system for charge dissipation in the formation of semiconductor device structures

Abstract

The present invention provides a system for dissipating any aberrant charge that may accumulate during the fabrication of a semiconductor device segment (), obviating overstress or break down damage to a focal device structure () that might result from uncontrolled dissipation of the aberrant charge. A substrate () has first and second intermediate structures () disposed atop the substrate, with the focal structure disposed atop the substrate therebetween. A first conductive structure () is disposed atop the second intermediate structure, the focal structure, and a portion of the first intermediate structure. A third intermediate structure () is disposed contiguously atop the first conductive structure and the first intermediate layer. A void () is formed in a peripheral region () of device segment, through the first and third intermediate layers down to the substrate. A second conductive structure () is disposed atop the third intermediate structure such that it couples the substrate through the void.