The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Jun. 10, 2004
Raymond J. E. Hueting, Hengelo, NL;
Erwin A. Hijzen, Blanden, BE;
Raymond J. E. Hueting, Hengelo, NL;
Erwin A. Hijzen, Blanden, BE;
NXP B.V., Eindhoven, NL;
Abstract
A field-effect transistor having cells () each having a source region (), source body region (), drift region (), drain body region () and drain region () arranged longitudinally, laterally alternating with structures to achieve a reduced surface field. In embodiments, the structures can include longitudinally spaced insulated gate trenches () defining a gate region () adjacent the source or drain region () and a longitudinally extending potential plate region () adjacent the drift region (). Alternatively, a separate potential plate region () or a longitudinally extending semi-insulating field plate () may be provided adjacent the drift region (). The transistor is suitable for bi-directional switching.