The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Oct. 28, 2005
Gang-feng Fang, Alameda, CA (US);
Dennis Sinitsky, Los Gatos, CA (US);
Wingyu Leung, Cupertino, CA (US);
Gang-feng Fang, Alameda, CA (US);
Dennis Sinitsky, Los Gatos, CA (US);
Wingyu Leung, Cupertino, CA (US);
Mosys, Inc., Sunnyvale, CA (US);
Abstract
A method, apparatus, and system in which an embedded memory fabricated in accordance with a conventional logic process includes one or more electrically-alterable non-volatile memory cells, each having a programming transistor, a read transistor and a control capacitor, which share a common floating gate electrode. The under-diffusion of the source/drain regions of the programming transistor and control capacitor are maximized. In one embodiment, the source/drain regions of the programming transistor are electrically shored by transistor punch-through (or direct contact).