The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Sep. 18, 2007
Applicants:
Hidekazu Miyake, Mobara, JP;
Toshihiko Itoga, Chiba, JP;
Eiji Oue, Mobara, JP;
Takeshi Noda, Mobara, JP;
Inventors:
Hidekazu Miyake, Mobara, JP;
Toshihiko Itoga, Chiba, JP;
Eiji Oue, Mobara, JP;
Takeshi Noda, Mobara, JP;
Assignee:
Hitachi Displays, Ltd., Chiba, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
Improvement in characteristics of a SELAX-TFT and throughput of ELA crystallization is achieved. When a thin film transistor using pseudo single crystal semiconductor and a thin film transistor using particulate polysilicon semiconductor are formed on a single substrate, the film thickness of an amorphous semiconductor film before crystallization in the pseudo single crystal semiconductor portion is greater than that in the polysilicon semiconductor portion.