The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2010

Filed:

Jul. 18, 2006
Applicants:

Woo-jae Lee, Gyeonggi-do, KR;

Mun-pyo Hong, Gyeonggi-do, KR;

Byoung-june Kim, Gyeonggi-do, KR;

Sung-hoon Yang, Seoul, KR;

Inventors:

Woo-jae Lee, Gyeonggi-do, KR;

Mun-pyo Hong, Gyeonggi-do, KR;

Byoung-june Kim, Gyeonggi-do, KR;

Sung-hoon Yang, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor (TFT) substrate comprises: a plastic insulation substrate; a first silicon nitride layer with a first refractive index, formed one surface of the plastic insulation substrate; and a TFT comprising a second silicon nitride layer formed with a second refractive index smaller than the first refractive index on the first silicon nitride layer. Thus, the present invention provides a TFT substrate wherein there is reduced a problem in that thin films are lifted from a plastic insulation substrate.


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