The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
May. 16, 2006
Kwang-kyu Bang, Hwaseong-si, KR;
Yong-won Lee, Incheon Metropolitan, KR;
Kyeong-seon Shin, Yongin-si, KR;
Hyen-wook Ju, Hwaseong-si, KR;
Jeong-kyu Kim, Hwaseong-si, KR;
Kwang-kyu Bang, Hwaseong-si, KR;
Yong-won Lee, Incheon Metropolitan, KR;
Kyeong-seon Shin, Yongin-si, KR;
Hyen-wook Ju, Hwaseong-si, KR;
Jeong-kyu Kim, Hwaseong-si, KR;
Samsung Electronics Co., Ltd, Gyeonggi-do, KR;
Abstract
Provided are a semiconductor device including a fuse focus detector, a fabrication method thereof and a laser repair method. In a chip region, fuses may be formed at a first level. A fuse focus detector including first and second conductive layers may be formed in a scribe line region. The first conductive layer may be formed at the first level, while the second conductive layer may be formed at a different level. For a laser repair method, a target region may be divided into sub-regions. In one selected sub-region, the fuse focus detector may be laser scanned in a direction for a reflection light measurement providing information on a thickness of the fuse focus detector. Using the thickness information, a focus offset value of a fuse in the selected sub-region may be calculated. When the focus offset value is within an allowable range, fuse cutting may be performed.