The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Dec. 26, 2006
Angela T. Hui, Fremont, CA (US);
Jihwan Choi, San Mateo, CA (US);
Angela T. Hui, Fremont, CA (US);
Jihwan Choi, San Mateo, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of manufacturing a memory device forms a first dielectric layer over a substrate, forms a charge storage layer over the first dielectric layer, forms a second dielectric layer over the charge storage layer, and forms a control gate layer over the second dielectric layer. The method also forms a hard mask layer over the control gate layer, forms a bottom anti-reflective coating (BARC) layer over the hard mask layer, and provides an etch chemistry that includes tetrafluoromethane (CF) and trifluoromethane (CHF) to etch at least the control gate layer.