The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Jan. 15, 2008
Yuko Fukami, Kariya, JP;
Ryuichiro Abe, Ichinomiya, JP;
Yuko Fukami, Kariya, JP;
Ryuichiro Abe, Ichinomiya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
Resistor elements are formed by doping impurity into a single crystal film formed on a substrate such as a silicon-on-insulator substrate. A semiconductor device having such resistor elements is used as a detector for detecting an amount of airflow, for example. The impurity density in the single crystal silicon is made lower than 1×10/cmto suppress a resistance change by aging especially at a temperature higher than 310° C. To obtain a high temperature coefficient of the resistor element as well as a low resistance change by aging, the impurity density is set in a range from 4×10/cmto 1×10/cm, and more preferably in a range from 7×10/cmto 1×10/cm. As the impurity, N-type impurity such as phosphorus or P-type impurity such as boron may be used. It is preferable to use the impurity having a low diffusion coefficient to attain a low resistance change by aging.