The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Apr. 11, 2007
Applicants:
Pinghai Hao, Plano, TX (US);
Imran Khan, Richardson, TX (US);
Joe Trogolo, Plano, TX (US);
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/337 (2006.01);
U.S. Cl.
CPC ...
Abstract
Fashioning a low noise (1/f) junction field effect transistor (JFET) is disclosed, where multiple implants are performed to push a conduction path of the transistor away from the surface of a layer upon which the transistor is formed. In this manner, current flow in the conduction path is less likely to be disturbed by defects that may exist at the surface of the layer, thereby mitigating (1/f) noise.