The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Oct. 16, 2003
Akira Okubo, Tokyo, JP;
Hideyuki Kondo, Tokyo, JP;
Akira Okubo, Tokyo, JP;
Hideyuki Kondo, Tokyo, JP;
Sumco Corporation, Tokyo, JP;
Abstract
An inspection method is provided for accurate measurement of conductive materials as defects within a silicon oxide film base material embedded in a SOI wafer sample. In the method, the internal state of a sampleis inspected by measuring an conductive material within an insulating base materialformed upon the sample. Ions or electrons are irradiated upon the surface of the inspection region of the base material. A surface image is imaged with secondary electrons emitted from the surfaceand the vicinity of the surface. The inspection region is etched and a surface image is imaged successively with secondary electrons emitted from a surfaceand from its vicinity, renewed successively at the etched depth. The conductive material within the base materialis measured based upon the accumulated surface images.