The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2010

Filed:

Oct. 25, 2007
Applicants:

Christopher Gonzalez, Shelburne, VT (US);

Vinod Ramadurai, South Burlington, VT (US);

Norman Jay Rohrer, Underhill, VT (US);

Inventors:

Christopher Gonzalez, Shelburne, VT (US);

Vinod Ramadurai, South Burlington, VT (US);

Norman Jay Rohrer, Underhill, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G06F 11/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A design structure and method comprising a degradation detection circuit configured to respond to degradation. The degradation detection circuit is located within a semiconductor device and comprises a process sensitive circuit, a measurement circuit, a calculation circuit, and a control circuit. The method comprises subjecting the semiconductor device to a first operating condition. A first value at a first time for a parameter of the process sensitive circuit is measured by the measurement circuit. The semiconductor device is operated to perform an intended function. A second value at a second time for the parameter of the circuit is measured by the measurement circuit. The second time is different from the first time. A first differential value between the first value and the second value is determined by the calculation circuit. The control circuit is configured to receive an enable signal.


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