The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Jul. 30, 2007
Katsumi Kishino, Tokyo, JP;
Ichiro Nomura, Tokyo, JP;
Tsunenori Asatsuma, Kanagawa, JP;
Hitoshi Nakamura, Hachioji, JP;
Tsukuru Ohtoshi, Hanno, JP;
Takeshi Kikawa, Kodaira, JP;
Sumiko Fujisaki, Hachioji, JP;
Shigehisa Tanaka, Koganei, JP;
Katsumi Kishino, Tokyo, JP;
Ichiro Nomura, Tokyo, JP;
Tsunenori Asatsuma, Kanagawa, JP;
Hitoshi Nakamura, Hachioji, JP;
Tsukuru Ohtoshi, Hanno, JP;
Takeshi Kikawa, Kodaira, JP;
Sumiko Fujisaki, Hachioji, JP;
Shigehisa Tanaka, Koganei, JP;
Abstract
The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser, an optical guide layer, and a cladding layer are constituted in a double hetero structure having a type I band line-up in order to enhance the injection efficiency of carriers to the active layer. Also, the active layer, the optical guide layer, and the cladding layer, which are capable of enhancing the optical confinement to the active layer, are constituted, and the cladding layer is constituted with bulk crystals.