The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2010

Filed:

Jan. 05, 2006
Applicants:

Masayuki Tajiri, Fukuyama, JP;

Atsushi Shimaoka, Kashihara, JP;

Kohji Inoue, Fukuyama, JP;

Inventors:

Masayuki Tajiri, Fukuyama, JP;

Atsushi Shimaoka, Kashihara, JP;

Kohji Inoue, Fukuyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device () comprises a memory cell array () in which memory cells each have a variable resistance element and the memory cells in the same row are connected to a common word line and the memory cells in the same column are connected to a common bit line, wherein during a predetermined memory action, the voltage amplitude of the voltage pulse applied to an end of at least one of the selected word line and the selected bit line is adjusted based on the position of the selected memory cell in the memory cell array () so that the effective voltage amplitude of a voltage pulse applied to the variable resistance element of the selected memory cell to be programmed or erased falls within a certain range regardless of the position in the memory cell array ().


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