The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2010

Filed:

Aug. 22, 2006
Applicants:

Won-cheol Jeong, Seoul, KR;

Se-ho Lee, Seoul, KR;

Jae-hyun Park, Yongin-si, KR;

Chang-wook Jeong, Seocho-gu, KR;

Inventors:

Won-Cheol Jeong, Seoul, KR;

Se-Ho Lee, Seoul, KR;

Jae-Hyun Park, Yongin-si, KR;

Chang-Wook Jeong, Seocho-gu, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 27/16 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A PRAM and method of forming the same are disclosed. In various embodiments, the PRAM includes a lower insulation layer formed on a semiconductor substrate, a phase change material pattern formed on the lower insulation layer and a heating electrode contacting the phase change material pattern. The heating electrode can be formed of a material having a positive temperature coefficient such that specific resistance of the material increases as a function of temperature.


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