The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2010

Filed:

Aug. 24, 2005
Applicant:

Seong-yeon Hwang, Suwon-si, KR;

Inventor:

Seong-Yeon Hwang, Suwon-si, KR;

Assignee:

Samsung SDI Co., Ltd., Suwon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 1/62 (2006.01); H01J 63/04 (2006.01); H01J 9/02 (2006.01); H01J 1/304 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electron emission device includes first and second substrates facing each other, cathode electrodes formed on the first substrate, and electron emission regions formed on the cathode electrodes. An insulating layer is formed on the cathode electrodes with opening portions exposing the electron emission regions. Gate electrodes are formed on the insulating layer with opening portions corresponding to the opening portions of the insulating layer. Phosphor layers are formed on the second substrate. At least one anode electrode is formed on a surface of the phosphor layers. The cathode and the gate electrodes are formed by thin filming, and the insulating layer is formed by thick filming.


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