The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2010

Filed:

Sep. 01, 2005
Applicants:

Kimiaki Toshikiyo, Osaka, JP;

Kazutoshi Onozawa, Osaka, JP;

Daisuke Ueda, Osaka, JP;

Taku Goubara, Kyoto, JP;

Inventors:

Kimiaki Toshikiyo, Osaka, JP;

Kazutoshi Onozawa, Osaka, JP;

Daisuke Ueda, Osaka, JP;

Taku Goubara, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high sensitive solid-state imaging apparatus which corresponds to an optical system has a short focal length (an optical system having a large incident angle θ). Each pixel (2.8 mm square in size) includes a distributed refractive index lens, a color filter for green, Al wirings, a signal transmitting unit, a planarized layer, a light-receiving element (Si photodiode), and an Si substrate. The concentric circle structure of the distributed index lens is made of four types of materials having different refractive indexes such as TiO(n=2.53), SiN (n=2.53), SiO(n=2.53), and air (n=1.0). In the concentric structure, a radial difference of outer peripheries of adjacent circular light-transmitting films is 100 nm. Furthermore, the film thickness is 0.4 νm.


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