The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Mar. 10, 2006
Applicants:
Cyril Cabral, Jr., Ossining, NY (US);
Christophe Detavernier, Denderleeuw, BE;
Rajarao Jammy, Hopewell Junction, NY (US);
Katherine L. Saenger, Ossining, NY (US);
Inventors:
Cyril Cabral, Jr., Ossining, NY (US);
Christophe Detavernier, Denderleeuw, BE;
Rajarao Jammy, Hopewell Junction, NY (US);
Katherine L. Saenger, Ossining, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/06 (2006.01); H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device such as a complementary metal oxide semiconductor (CMOS) including at least one FET that includes a gate electrode including a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.