The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Nov. 20, 2006
Hyoung-bin Park, Suwon-si, KR;
Seung-hyun Son, Suwon-si, KR;
Sang-hun Jang, Suwon-si, KR;
Gi-young Kim, Suwon-si, KR;
Sung-soo Kim, Suwon-si, KR;
Ho-nyeon Lee, Suwon-si, KR;
Hyoung-Bin Park, Suwon-si, KR;
Seung-Hyun Son, Suwon-si, KR;
Sang-Hun Jang, Suwon-si, KR;
Gi-Young Kim, Suwon-si, KR;
Sung-Soo Kim, Suwon-si, KR;
Ho-Nyeon Lee, Suwon-si, KR;
Samsung SDI Co., Ltd., Suwon-si, KR;
Abstract
A display device and a flat lamp that have simple structures and can be fabricated using simple fabricating processes, and a method of fabricating the display device and the flat lamp. The display device includes: a first substrate and a second substrate facing each other across a predetermined distance; barrier ribs defining light emitting cells with the first substrate and the second substrate; an anode electrode disposed in the light emitting cell; a conductive silicon layer disposed on an inner surface of one of the first and second substrates; an oxidized porous silicon layer, at least a part of which is disposed on the conductive silicon layer; and a gas contained in the light emitting cell. The fabrication method includes doping part of a silicon layer on the inner surface of the first or second substrate and changing another part of the silicon layer to an oxidized porous silicon layer.