The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Apr. 06, 2009
Chantal Arena, Mesa, AZ (US);
Pierre Tomasini, Tempe, AZ (US);
Nyles Cody, Tempe, AZ (US);
Matthias Bauer, Phoenix, AZ (US);
Chantal Arena, Mesa, AZ (US);
Pierre Tomasini, Tempe, AZ (US);
Nyles Cody, Tempe, AZ (US);
Matthias Bauer, Phoenix, AZ (US);
ASM America, Inc., Phoenix, AZ (US);
Abstract
A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buffer layer. The silicon germanium layer has less than about 10threading dislocations per square centimeter. By depositing the silicon buffer layer at a reduced deposition rate, the overlying silicon germanium layer can be provided with a 'crosshatch free' surface.